By Cherie R. Kagan, Paul Andry
Assesses the advance, houses, processing, patterning, and equipment characterization of skinny movie transistors in keeping with amorphous polycrystalline silicon. Tackles the demanding situations linked to designing high-resolution, large-area monitors.
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50. E. Stupp, U. Mitra, A. Carlson, H. Sorkin, M. Venkatesan, B. A. Khan, P. Janssen, and M. Stroomer, “Polysilicon TFT-LCD for Full-Resolution Color Video Projector,” Proc. 10th Int. Disp. Res. Conf. “Eurodisplay ‘90” (Soc. for Inf. Display, San Jose, 1990), p. 52. 51. T. W. Little, H. Koike, K. Takahara, T. Nakazawa, and H. 3-Mega-pixel Low-Temperature Poly-Si TFT-LCD Fabricated by SPC of Very Thin Films and an ECR-CVD Gate Insulator,” Conf. Record 1991 Int. Disp. Res. Conf. (IEEE, New York, 1991), p.
52. M. J. Lee, C. P. Judge, and S. W. Wright, “CdSe-TFTs for High-Speed Circuit Operations,” Proc. 3rd Int. CdSe Worshop, Strasbourg, France 1993 (Soc. for Inf. Display, San Jose, 1993). 53. M. Dobler, R. Bunz, E. Lueder, and T. Kallfass, “Fabrication of CdSe-TFTs with High Mobility of 300 cm2 V-s for a 140,000-pel AMLCD,” op. cit. 54. F. Garnier, Adv. Matls. 2, 592 (1990). 55. C. D. Dimitrakopoulos and D. J. Mascaro, “Organic Thin-Film Transistors: A Review of Recent Advances,” IBM J. Res. Dev.
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