By Peter Ashburn
SiGe HBTs is a scorching subject in the microelectronics group as a result of its functions strength inside built-in circuits working at radio frequencies. functions variety from excessive velocity optical networking to instant communique devices.The addition of germanium to silicon applied sciences to shape silicon germanium (SiGe) units has created a revolution within the semiconductor undefined. those transistors shape the permitting units in quite a lot of items for instant and stressed out communications.
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Extra resources for SiGe Heterojunction Bipolar Transistors
Example text
10) can be set to zero, thereby eliminating the requirement for a solution of Poisson’s equation. (5) No generation or recombination of carriers occurs in the depletion regions of the device. This assumption is required in order that simple boundary conditions can be established for the continuity equations. 2. 2 (a) One-dimensional representation of an npn bipolar transistor; (b) doping profiles for the case of abrupt pn junctions; (c) minority carrier distributions in the emitter and base for operation in the forward active region (6) Low-level injection conditions prevail.
This gain degradation is therefore a serious problem in the scaling of high-speed bipolar transistors. Polysilicon emitters and heterojunction emitters, which will be discussed in Chapters 6 and 8, provide two solutions to this problem. 1 INTRODUCTION The basic theory discussed in Chapter 2 laid the foundation for understanding the theory of operation of a bipolar transistor. However there are a number of deficiencies in the basic theory that need to be described before the theory can be applied to practical bipolar transistors.
26) except for the replacement of WE by Lpe . 29) shows that for a deep emitter, the base current does not depend on the emitter depth WE . This is as expected, since in a deep emitter all carriers recombine before reaching the emitter contact. 2, in a transistor with a relatively wide base, there can be considerable recombination of electrons in the neutral base. This gives rise to a base recombination current. In this section, an equation for the base recombination current will be calculated.