Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This e-book offers a single-source connection with one of many more difficult reliability concerns plaguing sleek semiconductor applied sciences, unfavorable bias temperature instability. Readers will take advantage of state-of-the artwork assurance of study in issues similar to time based disorder spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon thought, compact modeling with RC ladders and implications on equipment reliability and lifetime.

Show description

Read or Download Bias Temperature Instability for Devices and Circuits PDF

Best circuits books

Encyclopedia of Electronic Circuits

Diagrams and describes the fundamental circuits utilized in alarms, switches, voltmeters, battery chargers, modulators, receivers, transmitters, oscillators, amplifiers, converters, pulse turbines, and box power meters.

Millimeter-Wave Integrated Circuits

Millimeter-Wave built-in Circuits gives you a close review of MMIC layout, particularly concentrating on designs for the millimeter-wave (mm-wave) frequency variety. The scope of the publication is large, spanning specific discussions of high-frequency fabrics and applied sciences, high-frequency units, and the layout of high-frequency circuits.

Silicon-on-Insulator Technology: Materials to VLSI

Five. 2. contrast among thick- and thin-film units . . . . . . . . . . . . . . . . . . . . 109 five. three. I-V features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 five. three. 1. Threshold voltage .

Additional info for Bias Temperature Instability for Devices and Circuits

Sample text

Reisinger, O. Blank, W. Heinrigs, A. M¨uhlhoff, W. Gustin, and C. Schl¨under, “Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT -measurements,” in Proc. IRPS, pp. 448–453, 2006. 21. B. Kaczer, T. Grasser, Ph. J. Roussel, J. Martin-Martinez2, R. O’Connor, B. J. O’Sullivan, G. Groeseneken, “Ubiquitous Relaxation in BTI stressing – New Evaluation and Insights”, inProc. IRPS, pp. 20–27, 2008. 22. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, G. E. Maes, U. Schwalke, “Charge trapping in SiO2/HfO2 gate dielectrics: Comparison between charge-pumping and pulsed ID –VG ”, Microelectronic Engineering, Vol.

36. V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability Vol. 46, pp. 1–23, 2006. 37. Hans Reisinger, Ulrich Brunner, Wolfgang Heinrigs, Wolfgang Gustin, and Christian Schl¨under, “A Comparison of Fast Methods for Measuring NBTI Degradation”, IEEE Transactions on Device and Materials Reliability, vol. 7, pp. 531–539, 2007. 38. K. T. Krishnan, A. Marshall, J. Rodriguez, S. A. Rost, and S. Krishnan, “Impact of Negative Bias Temperature Instability on Digital Circuit Reliability” inProc.

E. Islam, C. Olsen, K. Ahmed, M. A. Alam and S. Mahapatra, “Material Dependence of NBTI Physical Mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A Comprehensive Study by Ultra-Fast On-The-Fly (UF-OTF) IDLIN Technique”, Technical Digest. International Electron Devices Meeting, (IEDM), pp. 809–812, 2008. 24. K. Zhao, J. H. Stathis, A. Kerber and E. Cartier, “PBTI Relaxation Dynamics after AC vs. DC Stress in High-k/Metal Gate Stacks” inProc. IRPS, pp. 50–54, 2010. 25. L. III Tewksbury andHae-Seung Lee,“Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs”, IEEE Journal of Solid-State Circuits, 29, pp.

Download PDF sample

Rated 4.88 of 5 – based on 36 votes