Analog Organic Electronics: Building Blocks for Organic by Hagen Marien

By Hagen Marien

This booklet offers perception into natural electronics expertise and in analog circuit concepts that may be used to extend the functionality of either analog and electronic natural circuits. It explores the area of natural electronics know-how for analog circuit purposes, in particular shrewdpermanent sensor structures. It makes a speciality of the entire construction blocks within the facts direction of an natural sensor procedure among the sensor and the electronic processing block. Sensors, amplifiers, analog-to-digital converters and DC-DC converters are mentioned intimately. insurance comprises circuit ideas, circuit implementation, layout judgements and dimension result of the development blocks described.

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Example text

A better insight into the functionality of the backgate is acquired when the VG − I D curves are plotted for various values of the backgate voltage VBG . The measured transistor curves are plotted in Fig. 17. The black line corresponds with the characteristics of a transistor with a W/L of 140 µm/5 µm with the backgate connected to the source, which is the ground level. The gray curves correspond to the same transistor with a gradually varying backgate voltage VBG . The leftmost curve corresponds with a VBG of 10 V and the rightmost curve with a VBG of −10 V.

2005). The measured value will be further employed in this work. Furthermore, the value of ξ is different for positive and negative voltages, according to Maddalena et al. (2008). Nevertheless, the measurements showed that in the applied technology these values are approximately identical hence they permit to use only the one measured value for ξ in this work. The VT shift can in a simplified way be explained by the electric field in the Z -direction that is superposed on the electric field that is already present in the original transistor.

The output resistance rsd of the transistor is given by Eq. 4 times higher than a transistor without a backgate. 33. The formula for the transistor current in saturation in Eq. 9) leaves the VD − I D behavior out of account. The more detailed formula with the VD − I D behavior included is written in Eq. 12) The model derived in this section takes into account the behavior of a transistor with a backgate contact in the saturation region. It is further used in this dissertation to model the transistors with a backgate, wherever they are used.

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